 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| AP6982M Advanced Power Electronics Corp. Low On-resistance Single Drive Requirement Surface Mount Package D2 D2 D2 D1 D2 D1 D1 D1 G2 G2 N-CHANNEL ENHANCEMENT MODE POWER MOSFET CH-1 BVDSS RDS(ON) ID 30V 18m 8.8A 30V 25m 7.5A SO-8 SO-8 S2 G1 S2 S1 G1 S1 CH-2 BVDSS RDS(ON) ID Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. G1 D1 D2 G2 S1 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25 ID@TA=70 IDM PD@TA=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating N-channel 30 25 8.8 7 30 2.0 0.016 -55 to 150 -55 to 150 P-channel 30 25 7.5 6 30 Units V V A A A W W/ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max. 62.5 Unit /W Data and specifications subject to change without notice 200526041 AP6982M CH-1 Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj RDS(ON) Parameter Drain-Source Breakdown Voltage 2 Test Conditions VGS=0V, ID=250uA Min. 30 1 - Typ. 0.02 13 17 5 10 11 6 33 25 320 220 1.57 Max. Units 18 30 3 1 25 100 27 V V/ m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA Static Drain-Source On-Resistance VGS=10V, ID=8A VGS=4.5V, ID=6A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70oC) o VDS=VGS, ID=250uA VDS=10V, ID=8A VDS=30V, VGS=0V VDS=24V, VGS=0V VGS=25V ID=8A VDS=24V VGS=4.5V VDS=15V ID=1A RG=3.3,VGS=10V RD=15 VGS=0V VDS=25V f=1.0MHz f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 2 1400 2240 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 2 Test Conditions IS=1.7A, VGS=0V IS=8A, VGS=0V dI/dt=100A/s Min. - Typ. 27 22 Max. Units 1.2 V ns nC Reverse Recovery Time Reverse Recovery Charge AP6982M CH-2 Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (T j=25 C) Drain-Source Leakage Current (T j=70 C) o o Test Conditions VGS=0V, ID=250uA 2 Min. 30 1 - Typ. 0.005 9 11 3 7 9 5 24 15 810 185 135 1.26 Max. Units 25 36 3 1 25 100 18 1230 V V/ m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA VGS=10V, ID=7A VGS=4.5V, ID=4A VDS=VGS, ID=250uA VDS=10V, ID=7A VDS=30V, VGS=0V VDS=24V, VGS=0V VGS=25V ID=7A VDS=24V VGS=4.5V VDS=15V ID=1A RG=3.3,VGS=10V RD=15 VGS=0V VDS=25V f=1.0MHz f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 2 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 2 Test Conditions IS=1.7A, VGS=0V IS=7A, VGS=0V dI/dt=100A/s Min. - Typ. 21 13 Max. Units 1.2 V ns nC Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board ; 135/W when mounted on min. copper pad. AP6982M Channel-1 60 60 T A =25 o C 50 10V 7.0V 5.0V ID , Drain Current (A) T A =25 o C 50 10V 7.0V 5.0V ID , Drain Current (A) 40 40 4.5V 30 4.5V 30 20 20 V G =3.0V 10 V G =3.0V 10 0 0 1 2 3 0 0 1 2 3 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 28 1.6 26 ID=6A T A =25 o C 1.4 ID=8A V G =10V 24 Normalized RDS(ON) 2 4 6 8 10 RDS(ON) (m ) 1.2 22 20 1.0 18 0.8 16 14 0.6 -50 0 50 100 150 V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C) o Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 2.0 6 5 1.5 4 3 Normalized VGS(th) (V) 1.2 IS(A) 1.0 T j =150 o C 2 T j =25 o C 0.5 1 0 0 0.2 0.4 0.6 0.8 1 0.0 -50 0 50 100 150 V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( C) o Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP6982M Channel-1 f=1.0MHz 14 10000 ID=8A 12 VGS , Gate to Source Voltage (V) 10 V DS =16V V DS =20V V DS =24V C (pF) C iss 1000 8 6 4 2 C oss C rss 0 100 0 10 20 30 40 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Duty factor=0.5 Normalized Thermal Response (R thja) 0.2 10 100us 1ms 0.1 0.1 0.05 ID (A) 1 10ms 100ms 0.02 0.01 PDM 0.01 Single Pulse t T Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja =135o C/W 0.1 T A =25 C Single Pulse 0.01 0.1 1 10 o 1s DC 100 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VDS 90% VG QG 4.5V QGS QGD 10% VGS td(on) tr td(off)tf Charge Q Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform AP6982M Channel-2 60 60 T A = 25 C 50 o 10V 7.0V 50 T A = 150 o C 10V 7.0V ID , Drain Current (A) 40 5.0V 4.5V ID , Drain Current (A) 40 5.0V 30 30 4.5V 20 20 10 V G =3.0V 10 V G =3.0V 0 0 1 2 3 0 0 1 2 3 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 38 1.6 35 ID=4A T A =25 C o 1.4 ID=7A V G =10V 32 Normalized R DS(ON) RDS(ON) (m ) 1.2 29 1.0 26 0.8 23 20 0.6 2 4 6 8 10 -50 0 50 100 150 V GS ,Gate-to-Source Voltage (V) T j , Junction Temperature ( C) o Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 2.0 6 5 1.5 4 3 Normalized VGS(th) (V) 1.2 IS(A) 1.0 T j =150 o C 2 T j =25 o C 0.5 1 0 0 0.2 0.4 0.6 0.8 1 0.0 -50 0 50 100 150 V SD , Source-to-Drain Voltage (V) T j ,Junction Temperature ( o C) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP6982M Channel-2 f=1.0MHz 14 10000 ID=7A 12 VGS , Gate to Source Voltage (V) 10 V DS =16V V DS =20V V DS =24V C (pF) 8 1000 6 C iss 4 2 C oss C rss 100 0 5 10 15 20 25 1 5 9 13 17 21 25 29 0 Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Duty factor=0.5 Normalized Thermal Response (Rthja) 0.2 10 0.1 100us 1ms ID (A) 1 0.1 0.05 0.02 0.01 10ms 100ms 0.1 PDM 0.01 Single Pulse t T Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja=135oC/W T A =25 o C Single Pulse 1s DC 0.01 0.1 1 10 100 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VDS 90% VG QG 4.5V QGS QGD 10% VGS td(on) tr td(off) tf Charge Q Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform |
Price & Availability of AP6982M
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |